Internal Optical Waveguide Loss and p-Type Absorption in Blue and Green InGaN Quantum Well Laser Diodes

Autor:	Rajaram Bhat, Albert Heberle, Kechang Song, Chung-En Zah, Dmitry Sizov
Rok vydání:	2010
Předmět:	Fabrication Materials science Photoluminescence business.industry General Engineering Physics::Optics General Physics and Astronomy Dopant Activation Laser Waveguide (optics) law.invention Optics law Optoelectronics Quantum well laser business Absorption (electromagnetic radiation) Diode
Zdroj:	Applied Physics Express. 3:122104
ISSN:	1882-0786 1882-0778
DOI:	10.1143/apex.3.122104
Popis:	We present a new characterization method for internal optical waveguide loss of blue, aquamarine, and green group-III–nitride laser diodes from as-grown wafers without need for further fabrication. This approach relies on excitation-position dependent polarization-resolved photoluminescence spectra collected from the edge of the planar waveguide. The high measurement accuracy of ±1 cm-1 enables for the first time determination of the mechanisms for p-layer optical loss from the waveguide loss difference before and after Mg dopant activation. Temperature-dependent measurements show that the dominant optical loss mechanism is absorption by acceptor-bound holes. This absorption mechanism does not depend significantly on light polarization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7d20a37a5744519d718b43aa923fd4ff https://doi.org/10.1143/apex.3.122104 Zobrazit plný text záznamu