Photo and electroluminescence from SiNx layers deposited by reactive sputtering

Autor:	Guilherme Sombrio, Paulo L. Franzen, Paulo A. Soave, Francio Rodrigues, Henri Ivanov Boudinov
Rok vydání:	2015
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Substrate (electronics) Electroluminescence chemistry.chemical_compound chemistry Silicon nitride Sputtering Optoelectronics business Spectroscopy Current density Indium
Zdroj:	2015 30th Symposium on Microelectronics Technology and Devices (SBMicro).
DOI:	10.1109/sbmicro.2015.7298152
Popis:	Non-stoichiometric silicon nitride layers were sandwiched between indium thin oxide (transparent contact) and n type silicon substrate. These films were deposited by reactive sputtering from silicon target. The composition and thickness were extracted by Rutherford backscattering spectroscopy measurement. Photo and electroluminescence spectra have been compared and there is a considerable difference between emitted wavelengths. Exponential conduction models (Pool-Frenkel and Fowler-Nordheim) were used to fit the experimental data. A linear correlation between electroluminescence intensity and current density has been observed. Electroluminescence spectra at several temperatures (50 to 300 K) were reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7d19c9197b28b92c91784430d1e15685 https://doi.org/10.1109/sbmicro.2015.7298152 Zobrazit plný text záznamu