Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

Autor:	John F. Conley, Gennadi Bersuker, A.Y. Kang, Jason T. Ryan, Patrick S. Lysaght, Patrick M. Lenahan
Rok vydání:	2005
Předmět:	Nuclear and High Energy Physics Materials science Silicon business.industry chemistry.chemical_element Electron Dielectric Atomic units Hafnium Nuclear Energy and Engineering chemistry Radiation damage Optoelectronics Irradiation Electrical and Electronic Engineering business High-κ dielectric
Zdroj:	IEEE Transactions on Nuclear Science. 52:2272-2275
ISSN:	0018-9499
DOI:	10.1109/tns.2005.860665
Popis:	We have identified the structure of three atomic scale defects which almost certainly play important roles in radiation damage in hafnium oxide based metal oxide silicon technology. We find that electron trapping centers dominate the HfO/sub 2/ radiation response. We find two radiation induced trapped electron centers in the HfO/sub 2/: an O/sub 2//sup -/ coupled to a hafnium ion and an HfO/sub 2/ oxygen vacancy center which is likely both an electron trap and a hole trap. We find that, under some circumstances, Si/dielectric interface traps similar to the Si/SiO/sub 2/ P/sub b/ centers are generated by irradiation. Our results show that there are very great atomic scale differences between radiation damage in conventional Si/SiO/sub 2/ devices and the new Si/dielectric devices based upon HfO/sub 2/.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7d102acb7e1918812b67eea504bcd3f9 https://doi.org/10.1109/tns.2005.860665 Zobrazit plný text záznamu