Liquid phase epitaxy of Nd3+ doped YAG layers by the dipping technique

Autor: R.D. Plättner, J.G. Grabmaier, P. Möckel, W.W. Krühler
Rok vydání: 1976
Předmět:
Zdroj: Journal of Crystal Growth. 34:280-284
ISSN: 0022-0248
DOI: 10.1016/0022-0248(76)90140-8
Popis: With a growth rate up to 2 μm/min epitaxial layers of Nd3+ doped yttrium aluminum garnets (Nd : YAG) were grown on pure one inch diameter YAG substrates for application in integrated optics by liquid phase epitaxy using the horizontal dipping technique. The quality of the layers up to 150 μm in thickness was examined optically, by X-ray photographs, by microprobe and by cathodoluminescence analysis. The layers are waterclear, free of cracks and strains, and have a smooth surface. The planity of the interface substrate/layer is of high quality. The layers are suitable for waveguides and laser application. Stimulated emission of radiation was measured.
Databáze: OpenAIRE