Excitonic recombination processes in GaAs grown by close-space vapour transport
| Autor: | Monji Zaidi, Ridha Ajjel, H. Mejri, Hichem Maaref, J. Mimila-Arroyo, L. Bouzrara, S. Alaya |
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| Rok vydání: | 2004 |
| Předmět: |
Photoluminescence
Deep-level transient spectroscopy Materials science Condensed Matter::Other Exciton General Engineering Atmospheric temperature range Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Molecular physics Condensed Matter::Materials Science Spontaneous emission Atomic physics Luminescence Excitation |
| Zdroj: | Microelectronics Journal. 35:577-580 |
| ISSN: | 0026-2692 |
| DOI: | 10.1016/j.mejo.2004.03.002 |
| Popis: | Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been observed in all of the layers with deposition temperature-dependent concentration. On the GaAs samples, also performed are photoluminescence experiments in the temperature range 10–300 K. Two peculiar features were revealed: (i) the radiative recombination in GaAs layers is increasingly dominated by bound–exciton transitions, (ii) the excitonic luminescence is found to be very sensitive to the growth conditions. A study of the near-band-edge photoluminescence as a function of power excitation and temperature has been done in an attempt to elucidate the origin of the enhanced bound–exciton luminescence. |
| Databáze: | OpenAIRE |
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