The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects

Autor:	Zbigniew Sobiesierski, David I. Westwood, Clarence Cherian Matthai
Rok vydání:	1999
Předmět:	Condensed matter physics Chemistry business.industry General Physics and Astronomy Surfaces and Interfaces General Chemistry Photon energy Condensed Matter Physics Epitaxy Surfaces Coatings and Films Semiconductor Quantum dot Growth rate Anisotropy business Wetting layer Molecular beam epitaxy
Zdroj:	Applied Surface Science. :484-487
ISSN:	0169-4332
DOI:	10.1016/s0169-4332(98)00845-9
Popis:	Reflectance anisotropy spectroscopy (RAS) has been used to monitor the formation and development of InAs islands grown onto GaAs(001) substrates in real time. This is possible because the signal at a photon energy of 4.0 eV is mainly sensitive to the thickness of the continuous inter-island wetting layer in the thickness range of interest. This makes it possible, for the first time, to follow the partition of material between the wetting layer and islands. Monitoring the deposition of 2 monolayers of material at a fixed growth temperature of 475°C reveals important details of the growth process, such as the fact that the fraction of the incident flux incorporated immediately into the islands is largely insensitive to growth rate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7cd787a41e9059a54c7c31357c0b8c81 https://doi.org/10.1016/s0169-4332(98)00845-9 Zobrazit plný text záznamu Full Text from ScienceDirect