High quality GaN films - growth and properties

Autor:	Jacek M. Baranowski, M. Wojdak, K. Pakua, M. Leszczy~ski, B. Suchanek
Rok vydání:	1998
Předmět:	Morphology (linguistics) Materials science Quality (physics) Semiconductor business.industry Density reduction Optoelectronics General Materials Science Crystal structure Metalorganic vapour phase epitaxy Dislocation business High electron
Zdroj:	MRS Internet Journal of Nitride Semiconductor Research. 3
ISSN:	1092-5783
DOI:	10.1557/s1092578300000958
Popis:	Growth of GaN/Al2O3 layers by MOVPE has been investigated. Precise optimization of the growth parameters results in films with extremely high electron mobility: 900 cm2/Vs at 300K and 4000 cm2/Vs at 77K. The influence of the growth parameters on film properties like morphology, crystallographic structure, and the concentration of electrically active defects is presented. The mechanism of dislocation density reduction is proposed to explain the obtained results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7cd2a7b74e1010c09ddfec5247f5e736 https://doi.org/10.1557/s1092578300000958 Zobrazit plný text záznamu Full text from SpringerLink