Unconventional anomalous Hall effect from antiferromagnetic domain walls ofNd2Ir2O7thin films

Autor: Ambrose Seo, Oleksandr B. Korneta, Miyoung Kim, Tae Won Noh, Daesu Lee, J. H. Gruenewald, Sangmo Cheon, Yoonkoo Kim, Taekoo Oh, Bongju Kim, Bohm-Jung Yang, Woo Jin Kim, Je-Geun Park, Hwanbeom Cho
Rok vydání: 2018
Předmět:
Zdroj: Physical Review B. 98
ISSN: 2469-9969
2469-9950
DOI: 10.1103/physrevb.98.125103
Popis: Ferroic domain walls (DWs) create different symmetries and ordered states compared with those in single-domain bulk materials. In particular, the DWs of an antiferromagnet with noncoplanar spin structure have a distinct symmetry that cannot be realized in those of their ferromagnet counterparts. In this paper, we show that an unconventional anomalous Hall effect (AHE) can arise from the DWs of a noncoplanar antiferromagnet, $\mathrm{N}{\mathrm{d}}_{2}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$. Bulk $\mathrm{N}{\mathrm{d}}_{2}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$ has a cubic symmetry; thus, its Hall signal should be zero without an applied magnetic field. The DWs generated in this material break the twofold rotational symmetry, which allows for finite anomalous Hall conductivity. A strong $f\text{\ensuremath{-}}d$ exchange interaction between the Nd and Ir magnetic moments significantly influences antiferromagnetic (AFM) domain switching. Our epitaxial $\mathrm{N}{\mathrm{d}}_{2}\mathrm{I}{\mathrm{r}}_{2}{\mathrm{O}}_{7}$ thin film showed a large enhancement of the AHE signal when the AFM domains switched, indicating that the AHE is mainly due to DWs. Our paper highlights the symmetry-broken interface of AFM materials as a means of exploring topological effects and their relevant applications.
Databáze: OpenAIRE