Anticrossing Due to Resonant Coupling of Hole Levels in Asymmetric Coupled-Quantum-Wells

Autor: Desheng Jiang, Guohua Li, Shijie Xu, Jinsheng Luo, Yaohui Zhang
Rok vydání: 1993
Předmět:
Zdroj: Chinese Physics Letters. 10:433-436
ISSN: 1741-3540
0256-307X
DOI: 10.1088/0256-307x/10/7/013
Popis: We present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased GaAs/Al0.35Ga0.65As/GaAs (50/40/100 angstrom) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. The minimum level splitting is about 2.5 meV.
Databáze: OpenAIRE