Class AB Power Amplifier for NB-IoT and LoRaWAN Communication Systems
| Autor: | Maksim Sokolov, Alexandr Savochkin, Aleksandr Timoshenko |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Class (computer programming)
business.industry Computer science Amplifier 020208 electrical & electronic engineering 05 social sciences 0507 social and economic geography Electrical engineering 02 engineering and technology Integrated circuit Communications system Power (physics) law.invention law Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Internet of Things business 050703 geography Electronic circuit |
| Zdroj: | 2020 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). |
| DOI: | 10.1109/eiconrus49466.2020.9039243 |
| Popis: | This paper presents the design stages of an integrated power amplifier for NB-IoT and LoRaWAN communication systems. As a result of the analysis of articles for design, the architecture of AB class amplifiers was chosen. The design of the amplifier was carried out using SG13 technology based on SiGe semiconductors according to technological standards of 130 nm. The design stages of the basic elements of a power amplifier are described: input matching circuits, bias circuits, load elements. As a result of modeling the amplifier circuit, the following results were obtained: 20 dB gain, frequency range 0,78-1 GHz, output power 21 dBm, PAE 53,5%, OIP3 30 dB. Compared with the NB-IoT mask, the compliance with the requirements for NB-IoT communication systems was established. The final stage of the design was learned by the integrated circuit dimensions of 1,5x1,5 mm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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