Photodetectors based on CuInS2
| Autor: | Sergey Gavrilov, L. N. Vostretsova, S. V. Bulyarsky |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
business.industry Chemistry Band gap Photodetector 02 engineering and technology Activation energy 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Concentration ratio Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Electronic states Tunnel effect Electrical resistivity and conductivity 0103 physical sciences Optoelectronics Charge carrier 0210 nano-technology business |
| Zdroj: | Semiconductors. 50:106-111 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782616010061 |
| Popis: | It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS2 and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 1016 cm–2. |
| Databáze: | OpenAIRE |
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