Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystals
| Autor: | W.T. Young, P.S. Aplin, Y. G. Shreter, John W Steeds, Y.T. Rebane, Colin J. Axon, O.V. Klyavin |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Dislocation creep
Materials science Photoluminescence Absorption spectroscopy Condensed matter physics Condensed Matter::Other Exciton Binding energy Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Inorganic Chemistry Crystal Condensed Matter::Materials Science Crystallography Materials Chemistry Dislocation Absorption (electromagnetic radiation) |
| Zdroj: | Journal of Crystal Growth. 159:883-888 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(95)00756-3 |
| Popis: | It has been found that the Y 0 line appears in photoluminescence (PL) and absorption of n-ZnSe crystals after plastic deformation. The concept of the dislocation exciton has been used to interpret the results. The binding energy of the dislocation exciton has been determined as 27 meV. It is suggested that dislocation excitons are destroyed by dislocation charge and, therefore, the Y 0 line can be related only to uncharged or slightly charged dislocations. It has also been found that the edge of the absorption spectra of the deformed and undeformed crystals are significantly extended as a result of the Franz-Keldysh effect from charged dislocations. Stress birefringence has also been observed in the deformed crystal. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect