7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization

Autor:	Rostislav Velichko, Mamoru Furuta, Daiki Tanaka, Yuki Tsuruma, Toshihiro Matsumura, Daichi Sasaki, Taiki Kataoka, Yusaku Magari, Emi Kawashima, Kenta Shimpo
Rok vydání:	2021
Předmět:	Oxide semiconductor Materials science Chemical engineering Thin-film transistor Solid phase crystallization Crystallite
Zdroj:	SID Symposium Digest of Technical Papers. 52:69-72
ISSN:	2168-0159 0097-966X
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ca60bdd2d24118b3e1f7e3391c1664e https://doi.org/10.1002/sdtp.14612 Zobrazit plný text záznamu Plný text