The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Autor:	De-Cheng Hsu, Ying-Lang Wang, Pi-Chun Juan, Ingram Yin-Ku Chang, Ming-Tsong Wang, Joseph Ya-min Lee
Rok vydání:	2008
Předmět:	Materials science Negative-bias temperature instability Physics and Astronomy (miscellaneous) Condensed matter physics Gate oxide Gate dielectric Analytical chemistry Field-effect transistor Dielectric Subthreshold slope High-κ dielectric Threshold voltage
Zdroj:	Applied Physics Letters. 92:202901
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2928235
Popis:	The positive bias temperature instability of n-channel metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric was studied. It was observed that the degradation in threshold voltage (ΔVT) has an exponential dependence on the stress time in the temperature range from 25to75°C. The measurement of subthreshold slope (ΔS) during stress indicates that the degradation in VT is due to the interface trap charges Qit. The extracted activation energy of 0.3–0.5eV is related to a degradation dominated by the release of atomic hydrogen in the Si–ZrO2 interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ca5f57388a32f27233675dc08421b22 https://doi.org/10.1063/1.2928235 Zobrazit plný text záznamu