| Popis: |
Transparent conducting Ga-doped ZnO (ZnO∶Ga) thin films with high transparency and relatively low resistivity have been successfully prepared on ZnO-buffered Polyimide (PI) by DC magnetron sputtering at room temperature. Structural, morphological, stress, optical and electrical proerties of ZnO∶Ga films are investigated. Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis. Sputtering pressure plays an important role on the electrical resistivity of flexible ZnO∶Ga films. When sputteting pressure increases from 2 Pa to 6 Pa, the resistivity of the deposited films initially decreases and then slightly increases. At the optimum sputtering pressure of 4 Pa, the lowest resistivity of 4.3×10-4Ω•㎝ is obtained. All the filma present a high transmittance over 90％ in limit spectral range. |
