CMOS-Integrated RF MEMS Resonators

Autor:	Brian H. Houston, Maxim Zalalutdinov, Bojan Ilic, Jeevak M. Parpia, Wenzhe Zhou, Joshua D. Cross, Jeffrey W. Baldwin
Rok vydání:	2010
Předmět:	Microelectromechanical systems Materials science business.industry Mechanical Engineering Capacitive sensing Integrated circuit Piezoresistive effect law.invention Resonator CMOS law Q factor Electronic engineering Optoelectronics Radio frequency Electrical and Electronic Engineering business
Zdroj:	Journal of Microelectromechanical Systems. 19:807-815
ISSN:	1941-0158 1057-7157
Popis:	We present a design approach that enables monolithic integration of high-quality-factor (Q) radio-frequency (RF) microelectromechanical systems (MEMS) resonators with CMOS electronics. Commercially available CMOS processes that feature two polysilicon layers and field oxide isolation can be used to implement this approach. By using a nonplanar resonator geometry in conjunction with mechanical stress in polycrystalline silicon (poly) gate layers, we create rigid and robust mechanical structures with efficient electromechanical transduction. We demonstrate polysilicon domes with capacitive pickup and arch-bridge resonators with piezoresistive readout. The small footprint of our MEMS structures enables on-chip integration of large arrays of resonators for RF signal processing or sensing applications. Their large surface-to-volume ratio in combination with high rigidity (that alleviates stiction associated with wet chemistry processing) can make these resonators particularly useful for sensors that require surface functionalization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c94ac4eda2108c011420476854fa7a1 https://doi.org/10.1109/jmems.2010.2049194 Zobrazit plný text záznamu