Lloyd’s mirror interference lithography below a 22-nm pitch with an accessible, tabletop, 13.5 nm high-harmonic EUV source

Autor: Henry Kaptyen, Sonia Castellanos, Eric Rinard, Esben W. Larsen, Nadia Vandenbroeck, John S. Petersen, Daisy Raymondson, Rod Ward, Danilo De Simone, Seth L. Cousin, Kevin Dorney, Peter De Schepper, C. Bargsten, Fabian Holzmeier, Dhirendra P. Singh, Paul van der Heide, Alessandro VaglioPret, Thomas Nuytten
Rok vydání: 2021
Předmět:
Zdroj: Novel Patterning Technologies 2021.
DOI: 10.1117/12.2595048
Popis: Recently, imec has installed and commissioned an industrial, ultrafast EUV materials characterization and lithography lab, imec’s AttoLab, with a primary aim to explore limits of photoresist performance and their associated ultrafast chemistries. Here, we demonstrate, for the first time, the use of a table-top, high-harmonic EUV system (KM Labs, XUUS4) to perform interference lithography of sub-22-nm pitch patterns in an Inpria MOx resist via a Lloyd’s mirror interference lithography (IL) tool. Analysis of SEM images enables us to identify potential sources of image blur, which we attribute to out-of-sync vibrations, flare, spectral purity, and laser stability. Nevertheless, these results confirm the ability of table-top, high-harmonic EUV sources to print lithographic patterns below a 22-nm pitch. In future work, we plan to investigate sub-20-nm patterning in different resist formulations, as well as expand the lithographic capabilities in AttoLab to perform IL on full 300-mm wafers.
Databáze: OpenAIRE