Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers
| Autor: | Hiroki Nakaie, Toshiyuki Takamatsu, Junji Yamanaka, Tetsuji Arai, Chiaya Yamamoto, Kiyokazu Nakagawa, Keisuke Arimoto |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Electron mobility Fabrication Materials science business.industry Heterojunction 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Ion source Computer Science::Other Lattice mismatch Condensed Matter::Materials Science Transition metal 0103 physical sciences Electronic engineering Optoelectronics Condensed Matter::Strongly Correlated Electrons Dislocation 0210 nano-technology business |
| Zdroj: | Journal of Materials Science and Chemical Engineering. :42-47 |
| ISSN: | 2327-6053 2327-6045 |
| DOI: | 10.4236/msce.2017.51006 |
| Popis: | We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET. |
| Databáze: | OpenAIRE |
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