Thermoelectric Properties of Co- and Mn-Doped Al2Fe3Si3
| Autor: | Ken Kurosaki, Hiroaki Muta, Yuji Ohishi, Kunio Yamamoto, Yasutaka Shiota |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Materials science business.industry Doping Analytical chemistry Spark plasma sintering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Thermoelectric materials 01 natural sciences Electronic Optical and Magnetic Materials Thermal conductivity Semiconductor Seebeck coefficient 0103 physical sciences Thermoelectric effect Materials Chemistry Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Electronic Materials. 48:475-482 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | Al2Fe3Si3 is a promising semiconductor for application as an environmentally friendly thermoelectric material. Its intrinsic carrier concentration is 5 × 1019 cm−3 and shows p-type conduction. In this article, we report on the thermoelectric properties of carrier-doped Al2Fe3Si3. Co or Mn was substituted for Fe for electron or hole doping, respectively. Al2Fe3−xMxSi3 (M=Co or Mn; x = 0.1–1.0 for Co and 0.1–0.3 for Mn) samples were synthesized by arc melting followed by spark plasma sintering and heat treatment. The Co- and Mn-doped samples displayed Hall carrier concentrations of 1.4 × 1020 cm−3 to 5.1 × 1020 cm−3 for n-type and 1.3 × 1020 cm−3 to 1.3 × 1021 cm−3 for p-type conduction. The n-type Al2Fe3Si3 exhibited a higher absolute value of Seebeck coefficient and lower Hall carrier mobility than p-type Al2Fe3Si3 at the same carrier concentration. The power factor increased with increasing carrier concentration for n-type conduction, and reached 0.65 × 10−3 W/mK at 520 K. On the other hand, the power factor for p-type Al2Fe3Si3 was not enhanced with increasing carrier concentration. The maximum ZT value for Co-substituted Al2Fe3Si3 was 0.09 at 600 K, which is 50% higher than that of pure Al2Fe3Si3. |
| Databáze: | OpenAIRE |
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