Damage-free highly efficient polishing of single-crystal diamond wafer by plasma-assisted polishing
| Autor: | Rongyan Sun, Katsuyoshi Endo, Hideaki Yamada, K. Emori, Kazuya Yamamura, Y. Mokuno, Yuji Ohkubo, A. Chayahara |
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| Rok vydání: | 2018 |
| Předmět: |
0209 industrial biotechnology
Materials science Mechanical Engineering Abrasive Diamond Polishing 02 engineering and technology Chemical vapor deposition engineering.material 021001 nanoscience & nanotechnology Industrial and Manufacturing Engineering symbols.namesake 020901 industrial engineering & automation Residual stress engineering Surface roughness symbols Wafer Composite material 0210 nano-technology Raman spectroscopy |
| Zdroj: | CIRP Annals. 67:353-356 |
| ISSN: | 0007-8506 |
| DOI: | 10.1016/j.cirp.2018.04.074 |
| Popis: | Single-crystal diamond (SCD) is considered to be an ideal material for next-generation power devices. Plasma-assisted polishing (PAP) without using an abrasive was applied to polish SCD fabricated by chemical vapor deposition. Argon-based plasma containing water vapour was used in the PAP to modify the surface of polishing plate and SCD (100), and SCD was polished under a polishing pressure ranging from 10 to 52.6 kPa. Raman spectroscopy measurement showed that there was no residual stress on the polished SCD surface, and a polishing rate of 2.1 μm/h and a surface roughness of 0.13 nm Sq were obtained. |
| Databáze: | OpenAIRE |
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