Localization crossover and phase coherent electron transport in a-InGaZnO4 thin films
| Autor: | Joynarayan Mukherjee, M. S. Ramachandra Rao |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Spintronics Magnetoresistance Condensed matter physics Chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Coherence length Pulsed laser deposition Amorphous solid Weak localization Phase (matter) 0103 physical sciences Thin film 010306 general physics 0210 nano-technology |
| Zdroj: | Applied Physics Letters. 110:122101 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4978530 |
| Popis: | Electrical and magnetotransport properties have been studied on pulsed laser deposition grown amorphous InGaZnO4 thin films exhibiting different disorder. A crossover from strong to weak localization was observed as disorder (quantified by a parameter kfl) decreases. The sample with kfl value 0.04 showed strong localization behavior whereas for the sample with kfl > 1, electron transport is governed by weak localization. The samples with kfl > 1 showed negative magnetoresistance (MR) because of the suppression of weak localization. From the MR study, we estimated the phase coherence length which scales with temperature as T−3∕4. The maximum phase coherence length was found to be 130 nm at 5 K for the sample with kfl = 1.71 and this can significantly influence the spintronic research in amorphous semiconductors. |
| Databáze: | OpenAIRE |
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