The characterization of poly‐Si thin film transistor crystallized by a new alignment SLS Process

Autor:	In Byeong Kang, Myoung Su Yang, Sang-Jin Lee, Kwang Sik Hwang, Joon Young Yang
Rok vydání:	2007
Předmět:	Materials science business.industry Thin-film transistor Process (computing) Optoelectronics Degradation (geology) General Materials Science Grain boundary Electrical and Electronic Engineering business Hot carrier stress Characterization (materials science)
Zdroj:	Journal of Information Display. 8:15-18
ISSN:	2158-1606 1598-0316
DOI:	10.1080/15980316.2007.9652040
Popis:	In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n‐type LDD MOSFETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c6f8176c5ebca2b45aacb7feaf921a8 https://doi.org/10.1080/15980316.2007.9652040 Zobrazit plný text záznamu