Radiation-resistant silicon diode temperature sensors

Autor: Yu.M. Shwarts, M.M. Shwarts, V.N. Sokolov, E. F. Venger
Rok vydání: 2002
Předmět:
Zdroj: Sensors and Actuators A: Physical. :271-279
ISSN: 0924-4247
DOI: 10.1016/s0924-4247(01)00874-3
Popis: We present a new type of silicon diode temperature sensors (DTSs) with high radiation resistance up to the dose of gamma irradiation ∼107 rad. Investigations of electrophysical and metrological characteristics of DTSs have been carried out in the range of temperatures 220–350 K and currents 10−11 to 10−2 A under gamma irradiation that allowed to reveal operating regimes with minimal influence of radiation on the device thermometric characteristics. A theoretical analytical model for the DTSs with almost ideal carrier transport has been proposed to explain the experimental behaviour of transport differential characteristics (ideality factor m, differential resistance) under irradiation. The observed non-monotonical dependencies of the ideality factor m on the current I are described well by the influence of generation–recombination and drift current components to the diffusion current of the minority carriers. The occurrence of a minimum in the m(I)-dependencies is due to a competition of these additional currents. The characteristic lifetimes of the minority carriers in the base and in the space-charge region of the diode structure have been determined. The DTSs are advanced devices with high sensitivity, accuracy, reproducibility, and easily adaptive with electronic equipment when operating in long circuits in radiation environments.
Databáze: OpenAIRE
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