An ultra-wide-band 3.1–10.6GHz LNA design in 0.18μm SiGe BiCMOS

Autor:	Lai Zongsheng, Ruan Ying, Zhang Runxi, Chen Lei, Shi Chunqi
Rok vydání:	2012
Předmět:	Matching (statistics) Materials science business.industry Power consumption Bicmos process Electrical engineering Electronic engineering Ultra-wideband Electrical and Electronic Engineering BiCMOS business Noise figure Power (physics)
Zdroj:	AEU - International Journal of Electronics and Communications. 66:157-161
ISSN:	1434-8411
DOI:	10.1016/j.aeue.2011.06.004
Popis:	A two-stage monolithic ultra-wide-band (UWB) low-noise-amplifier (LNA) designed for MB-OFDM in 0.18 μm SiGe BiCMOS process is presented. With an optimized configuration combining advantages of RES-feedback and LC-ladder matching structure, the adjustable wide input matching is got and noise figure (NF) is controlled to a relevant low status. The measured S21 is from 7.6 to 14.2 dB over the 3–11 GHz operating band, NF is from 3.2 dB to 4.8 dB. With a 2.5 V power supply, the LNA has an overall power consumption of 14.5 mW.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c6401a5372c9be98459607d412dcf8c https://doi.org/10.1016/j.aeue.2011.06.004 Zobrazit plný text záznamu Full Text from ScienceDirect