| Autor: |
Cheol Seong Hwang, Shin Hyuk Yang, Min Ki Ryu, Doohyung Cho, Chun-Won Byun, Jeong-Ik Lee, Hye-Yong Chu, Jaeheon Shin |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
Journal of the Korean Physical Society. 54:531-534 |
| ISSN: |
0374-4884 |
| DOI: |
10.3938/jkps.54.531 |
| Popis: |
We have studied transparent bottom-gate TFTs (thin film transistors) using amorphous IGZO (In-Ga-Zn-O) as an active channel material. The TFT devices had inverse co-planar structures. Source/drain and gate electrodes were constituted by ITO sputtered with a DC-RF magnetron sputter system, and an alkaline-free glass was used as a substrate. The gate insulator was Al2O3 formed by using an atomic layer deposition (ALD) method at 150 ◦C. An active layer was formed by off-axis RF magnetron sputtering and post-annealing was performed with a hot plate or a vacuum oven. The field effect mobilities and the sub-threshold swings of the IGZO TFTs were 12 ∼ 18 cm/Vs and 0.2 ∼ 0.6 V/dec, respectively. However, the hysteresis on I-V characteristics was relatively large without passivation. Thus, we passivated the TFT devices with inorganic and organic materials. After the organic passivation and post-heat treatments, the hysteresis was remarkably reduced without deterioration of the electrical characteristics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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