Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device
| Autor: | Tadahiko Sugibayashi, Shunsuke Fukami, Keizo Kinoshita, Sadahiko Miura, Hiroaki Honjo, Hideo Ohno, Michio Murahata, Noboru Sakimura, Ayuka Morioka, Yukihide Tsuji, K. Tokutome, Naoki Kasai, Ryusuke Nebashi, Kunihiko Ishihara |
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| Rok vydání: | 2014 |
| Předmět: |
Fabrication
Materials science business.industry technology industry and agriculture Coercivity Electronic Optical and Magnetic Materials Non-volatile memory Domain wall (magnetism) Stack (abstract data type) Etching (microfabrication) Optoelectronics Irradiation Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | IEEE Transactions on Magnetics. 50:1-4 |
| ISSN: | 1941-0069 0018-9464 |
| Popis: | We have developed a three-terminal domain wall motion (DWM) device. We found that its performance was significantly degraded by ion irradiation to the DWM materials under conventional etching conditions with Ar/NH3/CO gas mixture plasma for the device fabrication. To avoid this process-induced damage (PID), we fabricated and optimized a new material stack, in which a thin Ta layer is inserted on top of the capping layer of the DWM layer We found that the new stack effectively prevented a decrease in DWM layer coercivity, an increase in the critical current, and a decrease in the switching probability owing to the high-etch selectivity of Ta. As a result, the switching property of the DWM cell was greatly improved by the newly developed DWM stacks with high tolerance to PID. |
| Databáze: | OpenAIRE |
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