Analysis and Modeling of Thermal-Electric Coupling Effect of High-Power Monolithically Integrated Light-Emitting Diode
Autor: | Difei Bian, Mingdi Ding, Hongjuan Huang, Longjie Huang, Desheng Zhao, Yong Cai, Yunzhen Lin, Baoshun Zhang, Yibin Zhang |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Materials science Equivalent series resistance business.industry 02 engineering and technology Heat sink 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences Optoelectronics Junction temperature Electrical and Electronic Engineering Current (fluid) 0210 nano-technology business Electrical conductor Power density Diode Light-emitting diode |
Zdroj: | IEEE Transactions on Electron Devices. 65:564-571 |
ISSN: | 1557-9646 0018-9383 |
DOI: | 10.1109/ted.2017.2783622 |
Popis: | A 2-D thermal-electric coupling model has been developed, which enables us to evaluate the current distribution of monolithically integrated light-emitting diode (MI-LED). Based on the experimental IR images, the current distributions have been evaluated for the MI-LEDs on two types’ heat sinks. For the MI-LED on poor thermal conductive chip-on-board heat sink, although there is a large junction temperature variation of 40 °C all over the chip, the current only varies from −16% to 11% due to the high parasitic series resistance and the topological design of MI-LED. The experiments show that the impact of the heat-crowding-induced uneven current distribution on the wall-plug efficiency is negligible at a power density of 1 W/mm2. The average junction temperature is still the dominant issue. With a high thermal conductive copper heat sink, the average junction temperature could be suppressed below 50 °C, and there is no obvious heat crowding and uneven current distribution observed. |
Databáze: | OpenAIRE |
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