Nature of the ZnSe/GaAs interface investigated by atom probe tomography

Autor:	Dominique Mangelinck, Kuntheak Kheng, Serge Tatarenko, Marion Descoins, P. Rueda-Fonseca, L. Gerard, Edith Bellet-Amalric, H. Benallali, Khalid Hoummada
Rok vydání:	2013
Předmět:	Materials science Mechanical Engineering Metals and Alloys Analytical chemistry Substrate (electronics) Atom probe Condensed Matter Physics Atomic units law.invention Mechanics of Materials law General Materials Science Layer (electronics) Molecular beam epitaxy
Zdroj:	Scripta Materialia. 69:505-508
ISSN:	1359-6462
DOI:	10.1016/j.scriptamat.2013.05.041
Popis:	A ZnSe layer grown on a GaAs substrate by molecular beam epitaxy has been analysed by atom probe tomography. The one-dimensional concentration profile shows separation between Zn and Se and between Ga and As at the interface. A comparison of the concentration profile with different interface models suggests that the formation of a Ga 2 + x Se 3 compound at the ZnSe/GaAs interface with fewer vacancies than Ga 2 Se 3 ( x = 0.7). These results show the ability of atom probe tomography to characterize the interface at the atomic scale.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c3cd4f1d8b13a72a25fa97f24cb1c8b https://doi.org/10.1016/j.scriptamat.2013.05.041 Zobrazit plný text záznamu Full Text from ScienceDirect