| Autor: |
H.Y. Liu, M. S. Skolnick, V. P. Evtikhiev, Ian R. Sellers, A. S. Shkolnik, Mark Hopkinson, S. Pellegrini, Georgy G. Zegrya, Gerald S. Buller, Nikita Yu. Gordeev, Leonid Ya. Karachinsky |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
Time-resolved photoluminescence decay measurements have been performed on samples with varying sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate mis-orientation alone, but otherwise under identical growth conditions. Ground-state radiative recombination lifetimes from 0.8 to 5.3 ns in the incident energy density range of 0.79 pJcm-2 - 40 nJcm-2 at a temperature of 77 K were obtained. It was found that a reduction of the quantum dot size led to a corresponding reduction of the radiative lifetime. The evident bi-exponential decay was obtained for the ground state emission of the quantum dot array, with the slower second component attributed to a carrier re-capturing and indirect radiative recombination processes. Also experimental evidence of the effect of the AlGaAs barrier in InAs QDs emitting in the wavelength range 1200-1300nm is presented. Time-resolved photoluminescence measurements have been performed on samples with different compositions of Al in the barrier. A full discussion of the lifetimes of these near infra-red emitting dots will be presented. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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