X-ray emission spectroscopy of solids in the depth-resolution mode: Investigation of a-Si/Al/c-Si nanolayers

Autor:	S. V. Bukin, A. S. Shulakov, E. V. Zdanchuk, S. Yu. Tver’yanovich
Rok vydání:	2008
Předmět:	Amorphous silicon Materials science Silicon Nanocrystalline silicon Analytical chemistry General Physics and Astronomy chemistry.chemical_element Amorphous solid Atomic layer deposition chemistry.chemical_compound chemistry Emission spectrum Crystalline silicon Spectroscopy
Zdroj:	Bulletin of the Russian Academy of Sciences: Physics. 72:434-438
ISSN:	1934-9432 1062-8738
DOI:	10.3103/s1062873808040047
Popis:	The history of the development of ultrasoft X-ray emission depth-resolved spectroscopy is briefly reviewed. The results of the investigation of new model nanostructured materials (metal aluminum layers synthesized by atomic layer deposition on the surface of crystalline silicon and coated by an amorphous silicon layer) are reported. The thicknesses of the Al and amorphous Si layers were identical (10 and 50 nm, respectively). The three-level method of analysis of the results of measuring the shape and relative intensity of Al L2,3 and Si L2,3 X-ray emission spectra as functions of the energy of exciting electrons is described in detail. Applicability of the Borovsky-Rydnik model to description of the dependence of the intensity of ultrasoft characteristic emission bands in complex nanoscale heterostructures is demonstrated. The method developed has been proven to be efficient for studying the depth profiles of not only the phase chemical composition but also structural modifications of silicon.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c360e6e2ae88a634b8754d28f6e280e https://doi.org/10.3103/s1062873808040047 Zobrazit plný text záznamu Full text from SpringerLink