Insights and challenges toward understanding the electronic properties of hydrogenated nanocrystalline silicon
Autor: | Baojie Yan, Peter G. Hugger, J. David Cohen, Jeffrey Yang, Subhendu Guha |
---|---|
Rok vydání: | 2009 |
Předmět: | |
Zdroj: | Philosophical Magazine. 89:2541-2555 |
ISSN: | 1478-6443 1478-6435 |
Popis: | Hydrogenated nanocrystalline silicon (nc-Si:H) is a complex mixed-phase material containing regions of silicon nanocrystallites interspersed with amorphous silicon. It is an important material in efforts to advance the production of more economical multijunction thin-film silicon-based photovoltaic technologies. We have applied the junction capacitance methods of transient photocapacitance spectroscopy and drive-level capacitance profiling to understand its fundamental electronic properties. We compare results in both the annealed and light-soaked states for nc-Si:H samples having a wide range of amorphous-to-crystallite volume fractions. Significant differences between samples with lower and higher amorphous fractions are observed and we propose a tentative microscopic model that may account for these differences. |
Databáze: | OpenAIRE |
Externí odkaz: |