Ka-band monolithic gain control amplifier

Autor:	Vladimir Sokolov, T. Contolatis, J. Geddes
Rok vydání:	1986
Předmět:	Power gain Engineering business.industry Operational transconductance amplifier Amplifier Electrical engineering Automatic gain control Ka band Electrical and Electronic Engineering business Direct-coupled amplifier Fully differential amplifier Monolithic microwave integrated circuit
Zdroj:	Electronics Letters. 22:503
ISSN:	0013-5194
DOI:	10.1049/el:19860341
Popis:	A monolithic gain control amplifier for Ka-band has been developed based on 0.25 micron-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c27b9ae85f996b34a71b5df40f17bb3 https://doi.org/10.1049/el:19860341 Zobrazit plný text záznamu