Defect formation in silicon carbide large-scale ingots grown by sublimation technique

Autor: A. V. Bulatov, Yu. M. Tairov, S.I. Dorozhkin, A.O. Lebedev, D. D. Avrov
Rok vydání: 2005
Předmět:
Zdroj: Journal of Crystal Growth. 275:e485-e489
ISSN: 0022-0248
Popis: A model that includes both thermophoretic force and advective flow is developed to describe the mechanism of appearance of carbon macroinclusions in silicon carbide ingots grown by modified-Lely technique. The main moving force acting on the carbon particle suspended in a gas ambient appears to be a drag force, thermophoretic force being essential only for the relatively low temperatures (T 20 K/cm). It is shown that the radius of suspended particles may achieve hundreds of micrometers, and the data of calculations are in agreement with the experiment.
Databáze: OpenAIRE