Three-layer waveguide InGaAsP/lnP injection lasers
| Autor: | V A Skripkin, V I Shveĭkin, E G Shevchenko, L M Dolginov, P G Eliseev, A A Shelyakin, A E Drakin, M G Vasil'ev, G V Shepekina, A V Ivanov, B N Sverdlov, V P Konyaev |
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| Rok vydání: | 1984 |
| Předmět: |
Materials science
business.industry Band gap General Engineering Physics::Optics Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Laser Active layer Semiconductor laser theory law.invention Condensed Matter::Materials Science law Optoelectronics business Waveguide Solid solution |
| Zdroj: | Soviet Journal of Quantum Electronics. 14:431-432 |
| ISSN: | 0049-1748 |
| DOI: | 10.1070/qe1984v014n03abeh004941 |
| Popis: | Injection lasers with a three-layer waveguide emitting at the wavelength of about 1.3 μ were made and investigated. The liquid phase epitaxy method was used to form heterostructures on n- and p-type InP substrates and these heterostructures had lower threshold currents than conventional double-sided heterojunction lasers. A heterostructure with a three-layer waveguide had a thin active region (0.05-0.2 μ) consisting of a quaternary solid solution with adjoining layers of a transparent solid solution of intermediate composition which, together with the active layer, formed a waveguide for the laser radiation traveling in the medium with the wider band gap (InP). In the pulsed regime the minimum threshold current density was 930 A/cm2 at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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