FinFET Variability and Near-threshold operation: Impact on Full Adders design using XOR Blocks
| Autor: | Fabio G. Rossato G. da Silva, Ricardo Reis, Cristina Meinhardt |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
021110 strategic
defence & security studies Adder Maximum power principle Computer science 020208 electrical & electronic engineering 0211 other engineering and technologies 02 engineering and technology Power (physics) 0202 electrical engineering electronic engineering information engineering Electronic engineering Multigate device XOR gate Energy (signal processing) Voltage Electronic circuit |
| Zdroj: | ICECS |
| DOI: | 10.1109/icecs46596.2019.8965022 |
| Popis: | Near threshold operation reaches good results to energy critical applications. However, it introduces a considerable degradation on delay. Moreover, considering nano-effects, circuits operating at near-threshold are more sensitive to process variability. This paper analysis 9 full adders built with internal blocks that contain different combinations of 3 XOR logic circuits operating with nominal and near-threshold voltages under process variability effects. The experiments adopt the 7nm FinFET ASAP technology. The near-threshold operation can reduce on 97% the maximum power consumption and 65% the total energy, with an impact of about 10 times on delay. Considering process variability impact on energy and delay, the near-threshold operation turns the circuits about 1.6 and 4 times more sensitive in the critical cases, respectively. Compared with traditional full adders, the proposed circuits can improve around 15% of the delay with similar power results. The results provide valuable data and show how the impact of variability and near-threshold operation are important factors that must be analyzed to design more robust and low power circuits. |
| Databáze: | OpenAIRE |
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