A 5-10 GHz octave-band AlGaAs/GaAs HBT-Schottky diode down-converter MMIC
| Autor: | A.K. Oki, Kevin W. Kobayashi, D.C. Streit, R. Kasody |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Digital down converter business.industry Amplifier Heterojunction bipolar transistor Schottky diode Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit Diode Molecular beam epitaxy |
| Zdroj: | IEEE Journal of Solid-State Circuits. 31:1412-1418 |
| ISSN: | 0018-9200 |
| Popis: | The authors describe an AlGaAs/GaAs heterojunction bipolar transistor (HBT) X-band down-converter monolithic microwave integrated circuit (MMIC) which integrates a double double-balanced Schottky mixer and five stages of HBT amplification to achieve greater than 30 dB conversion gain over an RF bandwidth from 5 to 10 GHz. In addition, an output IP3 as high as +15 dBm has been achieved. The Schottky diodes are constructed from the existing N/sup $/collector and N/sup +/ subcollector layers of the HBT molecular beam epitaxy (MBE) device structure. A novel HBT amplifier topology employing active feedback which provides wide bandwidth in a compact area is used for the RF, LO, and IF amplifier stages. The complete down-converter MMIC is realized in a 3.6/spl times/3.4 mm/sup 2/ area, is self-biased through a 6 V supply, and consumes 530 mW. This MMIC represents the highest complexity X-band down-converter MMIC demonstrated using GaAs HBT-Schottky diode technology. |
| Databáze: | OpenAIRE |
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