Mechanism of arsenic incorporation in MOVPE growth of CdTe layers
| Autor: | Touati Ferid, Manabu Saji, Akikazu Tanaka, Kazuhito Yasuda, Masahisa Okada, Mitsuru Ekawa |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Dopant Vapor phase Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy complex mixtures Cadmium telluride photovoltaics Volumetric flow rate Inorganic Chemistry chemistry Environmental chemistry Materials Chemistry Pyrolytic carbon Metalorganic vapour phase epitaxy Arsenic |
| Zdroj: | Journal of Crystal Growth. 117:254-258 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(92)90755-8 |
| Popis: | The mechanism of As incorporation in CdTe layers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) is reported. Triethylarsine (TEAs) was used as a dopant source. The As incorporation decreased with the DETe flow rate under a fixed DMCd flow condition. On the other hand, the As incorporation increased as the growth temperature was decreased form 425 to 375°C. The As incorporation efficiency for TEAs was estimated to be about 0.1%, which is nearly equal to that for AsH 3 . Since the pyrolytic temperature for TEAs is much lower than for AsH 3 , these results indicate that the As incorporation is not dominated by the pyrolitic efficiency of the dopant source, but by the sticking rate of As species onto Cd species. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|