Electrical resistivity of atomically smooth single-crystal Cu films
| Autor: | Hyeon-Jin Shin, Prashant P. Shinde, Seongjun Park, Shashishekar P. Adiga, Yeonchoo Cho, Piyush Tagade, K. Subramanya Mayya, Shanthi Pandian, Aniruddha Konar |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Condensed matter physics Scattering Fermi level Bulk resistivity chemistry.chemical_element 02 engineering and technology Electronic structure 021001 nanoscience & nanotechnology 01 natural sciences Copper Boltzmann equation Condensed Matter::Materials Science symbols.namesake chemistry Electrical resistivity and conductivity Condensed Matter::Superconductivity 0103 physical sciences symbols 010306 general physics 0210 nano-technology Single crystal |
| Zdroj: | Physical Review B. 102 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.102.165102 |
| Popis: | We investigate using the Boltzmann transport equation the electrical resistivity of atomically smooth single-crystal $\mathrm{Cu}(111)$ and $\mathrm{Cu}(001)$ films with thickness 1--45 nm. Our transport calculations show that, in the absence of grain-boundary scattering and surface perturbations, the resistivity of Cu films of thickness comparable to the electron mean free path (40 nm for bulk copper) is close to the bulk resistivity. The resistivity increases trivially for sub-40-nm-thick films. These single-crystal Cu films show an intrinsic limit of resistivity. A steep increase in resistivity observed for ultrathin films is due to enhanced finite-size effects. We explain the cause of increase in resistivity by investigating the electronic structure at the Fermi level. |
| Databáze: | OpenAIRE |
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