Oxygen assisted ohmic contact formation mechanism ton‐type GaAs

Autor:	R. G. Schad, Naftali Lustig
Rok vydání:	1992
Předmět:	Auger electron spectroscopy Materials science Physics and Astronomy (miscellaneous) Contact resistance Oxide Analytical chemistry chemistry.chemical_element Substrate (electronics) Tungsten Oxygen chemistry.chemical_compound chemistry Layer (electronics) Ohmic contact
Zdroj:	Applied Physics Letters. 60:1984-1986
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.107119
Popis:	The presence of oxygen in the top W layer of NiGe(Au)W ohmic contacts to n‐type GaAs is found to play a critical role in reducing their contact resistance. Contacts with sputtered W containing less than 1 at. % oxygen and formed by rapid thermal annealing (RTA) yield a contact resistance (RC) greater than 0.45 Ω mm. Contacts with a reactively sputtered or electron‐beam evaporated metallic W oxide top layer, containing ∼25 at. % oxygen, yield RC’s of less than 0.15 Ω mm. Auger depth profiles of the reacted contacts show a significant outdiffusion of Ga from the GaAs substrate in the presence of the oxygenated W but not in the oxygen‐free contacts. A contact formation mechanism based on the gettering of Ga atoms by oxygen is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c0ab897cfab417fd56e6cd837790c8f https://doi.org/10.1063/1.107119 Zobrazit plný text záznamu