Ultrasound stimulated dissociation of Fe‐B pairs in silicon

Autor:	R. E. Bell, S. S. Ostapenko
Rok vydání:	1995
Předmět:	Materials science Silicon business.industry Ultrasound General Physics and Astronomy chemistry.chemical_element Molecular physics Dissociation (chemistry) Ultrasound treatment chemistry Impurity Wafer Boron business Recombination
Zdroj:	Journal of Applied Physics. 77:5458-5460
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.359243
Popis:	We found that application of ultrasound vibrations to p‐type silicon promotes a dissociation of iron‐boron pairs. This effect is manifested by a decrease of the minority carrier diffusion length, L, after ultrasound treatment (UST) of the silicon wafer. Post‐UST recovery of the diffusion length is identical after thermal and optical pair dissociation. This provides an unambiguous proof for dissociation of Fe‐B pairs stimulated by ultrasound vibrations. The UST process creates interstitial iron donors which acts as efficient recombination centers and lower the L value. A relevant physical mechanism of the ultrasound effect is discussed.
Databáze:	OpenAIRE
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