Autor:	Zhang Yu, Tong Ling, Ju Jing, Li Qiming, Zhang Qiong, Mengyan Lv, Ma Houyong
Rok vydání:	2014
Předmět:	Materials science Light extraction in LEDs business.industry Semiconductor materials Indium gallium nitride Light scattering law.invention chemistry.chemical_compound chemistry law Optoelectronics Quantum efficiency Light emission business Quantum well Light-emitting diode
Zdroj:	Light, Energy and the Environment.
DOI:	10.1364/soled.2014.dtu3d.1
Popis:	We will discuss our latest progress on advancing InGaN LEDs efficiency. Through improvement in epitaxial materials, current injection, and light extraction, we obtained a total of 20% increase on light emission efficiency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c0921b43deb765a75914ab836708b8d https://doi.org/10.1364/soled.2014.dtu3d.1 Zobrazit plný text záznamu