Room-temperature luminescence in semi-insulating polycrystalline silicon implanted with Er

Autor:	S. U. Campisano, Salvatore Lombardo, Albert Polman, G.N. van den Hoven
Rok vydání:	1995
Předmět:	Nuclear and High Energy Physics Materials science Silicon business.industry Doping chemistry.chemical_element Biasing Electroluminescence engineering.material Laser law.invention Polycrystalline silicon chemistry law Excited state engineering Optoelectronics business Luminescence Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:378-381
ISSN:	0168-583X
Popis:	We demonstrate sharp room-temperature electroluminescence at 1.54 μm due to intra-4f transitions of Er3+ in semi-insulating polycrystalline silicon (SIPOS) implanted with Er and annealed for implant damage recovery. Our measurements refer to SIPOS containing ≈ 30 at.% O, doped with Er to concentrations of about 1 at.% and annealed at a temperature in the 400–1100°C range. The luminescence has been excited either by optically pumping with an Ar laser or by biasing suitable metal-SIPOS-p+ silicon devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7c0213c03cb7cded9931ce628e14c985 https://doi.org/10.1016/0168-583x(94)00523-0 Zobrazit plný text záznamu Full Text from ScienceDirect