Synthesis of heteroepitaxial BP and related Al-B-Sb-As-P films via CVD of Al(BH4)3 and MH3 (M=P, As, Sb) at temperatures below 600 °C
| Autor: | Lei Liu, Houlong L. Zhuang, John Kouvetakis, Patrick M. Wallace, Patrick Sims, Jose Menendez |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Hexagonal crystal system Doping Heterojunction 02 engineering and technology Chemical vapor deposition Structural difference 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Amorphous solid Crystallography 0103 physical sciences Materials Chemistry Density functional theory Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Semiconductor Science and Technology. 35:085034 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/ab9325 |
| Popis: | Low temperature chemical vapor deposition (CVD) using the Al(BH4)3 and PH3 precursors at ~ 600 °C produces pure and crystalline BP films directly on Si and on ZrB2 buffer layers with no sign of Al incorporation. The BP films on ZrB2 are fully epitaxial despite the structural difference between the hexagonal buffer and the cubic epilayer. Density functional theory (DFT) calculations of the interface energies revealed strong bonding interactions at the heterojunction due to compliant lattice matching behavior, corroborating the favorable assembly of BP on ZrB2. A systematic study of the growth method is carried out by substituting As and Sb for P in the group-V carrier gas. Reactions of Al(BH4)3 with AsH3 at 320 °C yielded the expected BAs films with small amounts of Al. In this case the samples are amorphous and efforts to crystallize them by increasing the growth temperature yielded boron-rich analogues. Analogous reactions of Al(BH4)3 with SbD3 on Si at 300 °C produce AlSb epitaxial crystals doped with B instead of the BSb phase. This indicates that the process favors formation of Al-Sb bonds over the weaker B-Sb bonds. The results of this study indicate that the Al(BH4)3 approach represents a viable low-temperature route that may be advantageous in producing useful BP coatings with applications in thermal and optical technologies. The compound also represents an intriguing low-temperature route to BP, BAs, and AlSb-type materials when reacted with corresponding P, As, and Sb hydrides, yielding in each case the thermodynamically driven products. |
| Databáze: | OpenAIRE |
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