SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform
| Autor: | Joost Bekaert, Vadim Timoshkov, Friso Wittebrood, Ming Mao, Stefan Decoster, Philippe Leray, Bogumila Kutrzeba Kotowska, Paul Colsters, Mark John Maslow, Greg McIntyre, Joern-Holger Franke, Emily Gallagher, Frederic Lazzarino, Ton Kiers, Stephane Lariviere, Paolo Di Lorenzo, Victor M. Blanco Carballo, Eric Hendrickx, Joep van Dijk, R. Ryoung-han Kim |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Extreme ultraviolet lithography Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences 010309 optics Back end of line Logic synthesis Resist 0103 physical sciences Process integration Multiple patterning Optoelectronics 0210 nano-technology business Layer (electronics) Block (data storage) |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | The imec N7 (iN7) platform has been developed to evaluate EUV patterning of advanced logic BEOL layers. Its design is based on a 42 nm first-level metal (M1) pitch, and a 32 nm pitch for the subsequent M2 layer. With these pitches, the iN7 node is an ‘aggressive’ full-scaled N7, corresponding to IDM N7, or foundry N5. Even in a 1D design style, single exposure of the 16 nm half-pitch M2 layer is very challenging for EUV lithography, because of its tight tip-to-tip configurations. Therefore, the industry is considering the hybrid use of ArFi-based SAQP combined with EUV Block as an alternative to EUV single exposure. As a consequence, the EUV Block layer may be one of the first layers to adopt EUV lithography in HVM. In this paper, we report on the imec iN7 SAQP + Block litho performance and process integration, targeting the M2 patterning for a 7.5 track logic design. The Block layer is exposed on an ASML NXE:3300 EUV-scanner at imec, using optimized illumination conditions and state-of-the-art metal-containing negative tone resist (Inpria). Subsequently, the SAQP and block structures are characterized in a morphological study, assessing pattern fidelity and CD/EPE variability. The work is an experimental feasibility study of EUV insertion, for SAQP + Block M2 patterning on an industry-relevant N5 use-case. |
| Databáze: | OpenAIRE |
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