Ion beam characterization of the ion implanted arsenic tail in silicon

Autor:	P.M. Kahora, A. J. Filo, R.J. Jaccodine, Fred A. Stevie, S.E. Beck, R. B. Irwin
Rok vydání:	1990
Předmět:	Nuclear and High Energy Physics Materials science Ion beam Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Atmospheric temperature range Ion Ion beam deposition chemistry Spectroscopy Instrumentation Arsenic
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 47:29-32
ISSN:	0168-583X
DOI:	10.1016/0168-583x(90)90043-t
Popis:	Silicon has been ion implanted with arsenic to form shallow junctions. As the size of microelectronic devices becomes smaller, the role of the implanted tail distribution becomes important. Tail profiles have been produced by an anodic oxidation and stripping technique after implantation. These tails were then annealed in the 800 to 1100°C temperature range. Results from Rutherford backscattering spectroscopy, channeling, and secondary ion mass spectroscopy are presented. The diffusion of the arsenic tail is different than the total profile. The tail substitutionality decreases with increasing annealing temperature. Precipitation is the most probable mechanism involved in this decrease.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7bf1e96106e65f4230d0fa12440aa61a https://doi.org/10.1016/0168-583x(90)90043-t Zobrazit plný text záznamu