High-Performance Polyimide-Based ReRAM for Nonvolatile Memory Application

Autor:	Wen Luh Yang, Po-Yang Wang, Tien-Sheng Chao, Chi-Chang Wu, Sheng-Hsien Liu, Ming-Jui Tsai, Yu-Yuan Su, Meng-Ru Ye
Rok vydání:	2013
Předmět:	Non-volatile memory Materials science business.industry Electrical engineering Optoelectronics Electrical and Electronic Engineering Thin film business Fast switching Polyimide Electronic Optical and Magnetic Materials Resistive random-access memory Voltage
Zdroj:	IEEE Electron Device Letters. 34:123-125
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2012.2224633
Popis:	In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between highand low-resistance states is triggered by the formation and dissociation of the charge transfer complex. As compared with the electrochemical-metallization-based ReRAM and the valence-change-based ReRAM, this DAXIN-PI ReRAM shows excellent performance, including large Ron/Roff ratio, superior endurance, low operation voltage, fast switching speed, needless of a forming process, and acceptable retention characteristics. Among them, large Ron/Roff ratio (>; 105) and superior endurance (>; 105 cycles) can be simultaneously achieved, and the detailed reliability test for PI-based ReRAMs has been analyzed for the first time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7befeb1737719cfd2fde082b97907bb2 https://doi.org/10.1109/led.2012.2224633 Zobrazit plný text záznamu