P-4: Fabrication of Extremely Low Roughness Polycrystalline Silicon and Its Correlation to Device Performance

Autor: Jia-Xing Lin, Yung-Fu Wu, Yu‐Rung Liu, Shang‐Wen Chang, Yu-Cheng Chen, Chai-Yuan Sheu, Jung‐Fang Chang, Yung-Hui Yeh, Chi-Lin Chen
Rok vydání: 2003
Předmět:
Zdroj: SID Symposium Digest of Technical Papers. 34:216
ISSN: 0097-966X
DOI: 10.1889/1.1832241
Popis: The process of smoothing polycrystalline silicon surface has been investigated. By etching the precursor and controlling the laser annealing, The roughness of poly-Si can be planarized to a very low level RMS
Databáze: OpenAIRE