New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors

Autor:	Mohammad R. Mirabedini, Hisham Z. Massoud, S.H. Goodwin-Johansson
Rok vydání:	1994
Předmět:	Materials science Fabrication Physics and Astronomy (miscellaneous) Silicon business.industry Annealing (metallurgy) Transistor chemistry.chemical_element law.invention chemistry law MOSFET Cathode ray Optoelectronics Field-effect transistor business Porosity
Zdroj:	Applied Physics Letters. 65:728-730
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.113014
Popis:	We report the porous nature of electron‐beam evaporated silicon on the sidewalls of metal‐oxide‐semiconductor field‐effect transistor (MOSFET) gate spacers. This property was used to develop and fabricate submicron elevated source/drain MOSFETs with 200–500 A ultrashallow junctions. Using electron‐beam evaporated silicon reduces fabrication complexity, overcomes common problems inherent to elevated source/drain MOSFETs, and yields a self‐aligned process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7be65201361948f5e299b10bdb563c9d https://doi.org/10.1063/1.113014 Zobrazit plný text záznamu