| Autor: |
T. Isshiki, Rengarajan Sudharsanan, D.D. Krut, Nasser H. Karam, J.H. Ermer, W. Nishikawa |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.. |
| DOI: |
10.1109/pvsc.2002.1190727 |
| Popis: |
A very high current density 2-Volt Laser Power Photovoltaic GaAs converter has been fabricated to produce over 360 mW of output power with monochromatic illumination of one optical Watt at 810 nm. To build-up the voltage, the converter consists of two interconnected N/P GaAs elements integrated in series on the semi-insulating GaAs substrate. Several technological issues, including, conductive losses through the sheet for the series interconnection of elements, have been successfully addressed. This device operates at a nominal optical power density of 57W/cm/sup 2/, which is equivalent to over 700 suns of AM1.5D illumination, demonstrating feasibility of fabricating high voltage integrated cells for concentrator applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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