Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser Annealing
| Autor: | C. W. White, D. M. Mills, T.S. Noggle, Bennett C. Larson |
|---|---|
| Rok vydání: | 1982 |
| Předmět: |
inorganic chemicals
Diffraction Materials science Silicon Physics::Instrumentation and Detectors Annealing (metallurgy) business.industry Analytical chemistry General Physics and Astronomy chemistry.chemical_element Synchrotron radiation Nanosecond equipment and supplies Condensed Matter::Materials Science Ion implantation Optics chemistry Impurity biological sciences X-ray crystallography business |
| Zdroj: | Physical Review Letters. 48:337-340 |
| ISSN: | 0031-9007 |
| DOI: | 10.1103/physrevlett.48.337 |
| Popis: | Time-resolved x-ray diffraction measurements of lattice strain in silicon during pulsed-laser annealing have been made with nanosecond resolution by using synchrotron radiation. Analyses of the strain in pure and boron-implanted silicon in terms of temperature indicate high temperatures and evidence for near-surface melting, in qualitative agreement with the melting model of laser annealing. |
| Databáze: | OpenAIRE |
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